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| U30QWK2C53 TOSHIBA Schottky Barrier Rectifier Stack Trench Schottky Barrier Type U30QWK2C53 Switching Mode Power Supply Application Converter&Chopper Application * * * * * Repetitive peak reverse voltage: VRRM = 120 V Peak forward voltage: VFM = 0.85 V (max) Average output recified current: IO = 30 A Power surface mount device for thin flat package. "TFP" (Toshiba package name) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Repetitive peak reverse voltage Average output recified current Peak one cycle surge forward current (non-repetitive, sine wave) Junction temperature Storage temperature range Symbol VRRM IO IFSM Tj Tstg Rating 120 30 100 (50 Hz) 110 (60 Hz) -40 to 150 -40 to 150 Unit V A A C C JEDEC JEITA TOSHIBA 12-9B1A Weight: 0.74 g (typ.) Polarity K *A1 A2 *: Common Terminal Handling Precaution Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to other rectifier products. This current leakage and not proper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration when you design. 1 2003-02-17 U30QWK2C53 Electrical Characteristics (Ta = 25C) Characteristics Peak forward voltage Repetitive peak reverse current Junction Capacitance Thermal resistance Symbol VFM IRRM Cj Rth (j-c) Test Condition IFM = 15 A VRRM = 120 V VR = 10 V, f = 1.0 MHz DC Total, Junction to Case Min 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 230 3/4 Max 0.85 50 3/4 1.2 Unit V mA pF C/W Note: VFM, IRRM, Cj: A value of one cell. Marking 1 1 2 MARK 30QWK2C TYPE U30QWK2C53 2 Lot Number Month (starting from alphabet A) Year (last number of the christian era) Standard Soldering Pad 8.0 unit: mm 2.5 2.0 3.2 3.8 2.0 2.0 6.0 2 2003-02-17 U30QWK2C53 iF - vF 100 One cell 32 28 PF (AV) - Io sin 120 24 20 16 12 8 0 a 360 4 0 0 Conduction angle a 4 8 12 16 20 24 28 32 36 a = 30 60 Rectangular waveform (one cell) 90 180 (A) Tj = 150C 10 100C 75C Instantaneous forward current 1 25C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Average forward power dissipation PF (AV) (W) iF Instantaneous forward voltage vF (V) Average output rectified current Io (A) Tc max - Io 160 120 Surge forward current (non-repetitive) One cell Single phase full Sine wave Ta = 25C Maximum allowable case temperature Tc max (C) 140 120 100 80 60 40 0 a 360 20 0 0 Conduction angle a 4 8 12 16 20 24 28 32 36 a = 30 Rectangular waveform (one cell) 180 (A) Peak surge forward current IFSM 100 80 60 90 120 sin 60 50 Hz 60 Hz 40 20 0 1 10 100 Average output rectified current Io (A) Number of cycles rth (j-c) - t 10 One cell 1000 Cj - VR (typical) f = 1 MHz (pF) Ta = 25C One cell Transient thermal impedance rth (j-c) (C/W) Junction capacitance 0.01 0.1 1 10 Cj 1 100 0.1 0.001 10 1 100 1000 10 100 Time t (s) Reverse voltage VR (V) 3 2003-02-17 U30QWK2C53 I R - Tj 100 Pulse measurement (one cell) 10 (typical) 120 50 3.2 Rectangular waveform 0 360 PR (AV) - VR (typical) Average reverse power dissipation PR (AV) (W) (mA) 2.8 2.4 2.0 1.6 1.2 VR Conduction angle a Tj = 150C 180 120 60 300 240 DC Reverse current IR 1 0.1 0.01 100 0.8 0.4 0.0 0 0.001 0 30 20 VR = 10 V 40 60 80 100 120 140 160 20 40 60 80 100 120 Junction temperature Tj (C) Reverse voltage VR (V) 4 2003-02-17 U30QWK2C53 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2003-02-17 |
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